Транзистор: N-MOSFET Технические параметры
- Case: TO3PN
- Channel kind: enhanced
- Drain current: 35A
- Drain-source voltage: 300V
- Gate charge: 100нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 56mΩ
- Polarisation: unipolar
- Power dissipation: 500W
- Pulsed drain current: 236A
- Type of transistor: N-MOSFET