Транзистор: N-MOSFET x2 Технические параметры
- Case: SOT363
- Channel kind: enhanced
- Drain current: 110mA
- Drain-source voltage: 30V
- Gate charge: 440пКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 9.2Ω
- Polarisation: unipolar
- Power dissipation: 375mW
- Pulsed drain current: 0.72A
- Type of transistor: N-MOSFET x2