Транзистор: P-MOSFET; полевой; -30В; -28А; Idm: -80А; 40Вт; QFN3X3 Технические параметры
- Case: QFN3X3
- Channel kind: enhanced
- Drain current: -28A
- Drain-source voltage: -30V
- Gate charge: 30нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: Diotec Semiconductor
- Mounting: SMD
- On-State Resistance: 9.5mΩ
- Polarisation: unipolar
- Power dissipation: 40W
- Pulsed drain current: -80A
- Type of transistor: P-MOSFET