Транзистор: N-MOSFET; полевой; 400В; 13,8А; Idm: 92А; 235Вт; TO3PN Технические параметры
- Case: TO3PN
- Channel kind: enhanced
- Drain current: 13.8A
- Drain-source voltage: 400V
- Gate charge: 60нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 190mΩ
- Polarisation: unipolar
- Power dissipation: 235W
- Pulsed drain current: 92A
- Type of transistor: N-MOSFET