Транзистор: N-MOSFET; полевой; 500В; 14А; Idm: 96А; 270Вт; TO3PN Технические параметры
- Case: TO3PN
- Channel kind: enhanced
- Drain current: 14A
- Drain-source voltage: 500V
- Gate charge: 85нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 190mΩ
- Polarisation: unipolar
- Power dissipation: 270W
- Pulsed drain current: 96A
- Type of transistor: N-MOSFET