Транзистор: N-MOSFET; полевой; 250В; 44,2А; Idm: 276А; 480Вт; TO3PN Технические параметры
- Case: TO3PN
- Channel kind: enhanced
- Drain current: 44.2A
- Drain-source voltage: 250V
- Gate charge: 100нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 41mΩ
- Polarisation: unipolar
- Power dissipation: 480W
- Pulsed drain current: 276A
- Type of transistor: N-MOSFET