Транзистор: P-MOSFET; полевой; -12В; -12А; Idm: -40А; 2,4Вт Технические параметры
- Case: MicroFET
- Channel kind: enhanced
- Drain current: -12A
- Drain-source voltage: -12V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 34нКл
- Gate-source voltage: ±8V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 16mΩ
- Polarisation: unipolar
- Power dissipation: 2.4W
- Pulsed drain current: -40A
- Type of transistor: P-MOSFET