Транзистор: N-MOSFET x2; полевой; 30В; 7,5А; Idm: 49А; 1,6Вт; SO8 Технические параметры
- Case: SO8
- Channel kind: enhanced
- Drain current: 7.5A
- Drain-source voltage: 30V
- Gate charge: 26нКл
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 29mΩ
- Polarisation: unipolar
- Power dissipation: 1.6W
- Pulsed drain current: 49A
- Type of transistor: N-MOSFET x2