Транзистор: N-MOSFET; SiC; полевой; 1,7кВ; 3,5А; Idm: 15А; 54Вт Технические параметры
- Case: TO247-3
- Channel kind: enhanced
- Drain current: 3.5A
- Drain-source voltage: 1.7kV
- Gate charge: 15нКл
- Gate-source voltage: -5...20V
- Kind of package: tube
- Manufacturer: Littelfuse
- Mounting: THT
- On-State Resistance: 1Ω
- Polarisation: unipolar
- Power dissipation: 54W
- Pulsed drain current: 15A
- Technology: SiC
- Type of transistor: N-MOSFET