Транзистор: N-MOSFET; SiC; полевой; 1,7кВ; 4,5А; Idm: 11А; 65Вт Технические параметры
- Case: TO263-7
- Channel kind: enhanced
- Drain current: 4.5A
- Drain-source voltage: 1.7kV
- Features of semiconductor devices: Kelvin terminal
- Gate charge: 11нКл
- Gate-source voltage: -5...20V
- Kind of package: tube
- Manufacturer: Littelfuse
- Mounting: SMD
- On-State Resistance: 750mΩ
- Polarisation: unipolar
- Power dissipation: 65W
- Pulsed drain current: 11A
- Technology: SiC
- Type of transistor: N-MOSFET