Технические параметры
- Technology: SiC
- Drain current: 4.5A
- Gate charge: 11nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: -5...20V
- Drain-source voltage: 1.7kV
- Pulsed drain current: 11A
- Features of semiconductor devices: Kelvin terminal
- Mounting: SMD
- Case: TO263-7
- Type of transistor: N-MOSFET
- On-State Resistance: 750mΩ
- Power dissipation: 65W