Транзистор: N-MOSFET x2; полевой; 60В; 350мА; 0,2Вт; SOT363 Технические параметры
- Application: automotive industry
- Case: SOT363
- Channel kind: enhanced
- Drain current: 350mA
- Drain-source voltage: 60V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: Diotec Semiconductor
- Mounting: SMD
- On-State Resistance: 2Ω
- Polarisation: unipolar
- Power dissipation: 0.2W
- Type of transistor: N-MOSFET x2