Транзистор: N-MOSFET; полевой; 55В; 75А; Idm: 240А; 300Вт; TO220AB Технические параметры
- Case: TO220AB
- Channel kind: enhanced
- Drain current: 75A
- Drain-source voltage: 55V
- Gate charge: 95.6нКл
- Gate-source voltage: ±15V
- Kind of package: tube
- Manufacturer: NEXPERIA
- Mounting: THT
- On-State Resistance: 3.7mΩ
- Polarisation: unipolar
- Power dissipation: 300W
- Pulsed drain current: 240A
- Type of transistor: N-MOSFET