Транзистор: N-MOSFET; полевой; 75В; 47А; Idm: 240А; 157Вт; TO220AB Технические параметры
- Case: TO220AB
- Channel kind: enhanced
- Drain current: 47A
- Drain-source voltage: 75V
- Gate charge: 30нКл
- Gate-source voltage: ±15V
- Kind of package: tube
- Manufacturer: NEXPERIA
- Mounting: THT
- On-State Resistance: 16mΩ
- Polarisation: unipolar
- Power dissipation: 157W
- Pulsed drain current: 240A
- Type of transistor: N-MOSFET