Технические параметры
- Technology: Trench
- Drain current: 5.3/-4.5A
- Gate charge: 21.7/12.2nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±12/±12V
- Drain-source voltage: 20/-20V
- Pulsed drain current: -14...12A
- Mounting: SMD
- Case: DFN2020-6
- Type of transistor: N/P-MOSFET
- On-State Resistance: 34/70mΩ