Технические параметры
- Technology: Trench
- Drain current: 400/-300mA
- Gate charge: 700pC/2.1nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±8/±8V
- Drain-source voltage: 20/-20V
- Pulsed drain current: -2...2.5A
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: SOT1216
- Type of transistor: N/P-MOSFET
- On-State Resistance: 1/2.1Ω