Технические параметры
- Technology: Trench
- Drain current: -1.7A
- Gate charge: 8.6nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±12V
- Drain-source voltage: -20V
- Pulsed drain current: -11A
- Mounting: SMD
- Case: DFN2020-6
- Type of transistor: P-MOSFET x2
- On-State Resistance: 148mΩ