Технические параметры
- Technology: Trench
- Drain current: 500/-350mA
- Gate charge: 680pC/1.14nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±8/±8V
- Drain-source voltage: 20/-20V
- Pulsed drain current: -2.2...3.2A
- Mounting: SMD
- Case: SOT666
- Type of transistor: N/P-MOSFET
- On-State Resistance: 610mΩ/1.4Ω
- Power dissipation: 500mW