Технические параметры
- Technology: Trench
- Drain current: 500mA
- Gate charge: 680pC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±8V
- Drain-source voltage: 20V
- Pulsed drain current: 3.2A
- Mounting: SMD
- Case: SOT666
- Type of transistor: N-MOSFET x2
- On-State Resistance: 610mΩ
- Power dissipation: 500mW