Технические параметры
- Technology: Trench
- Drain current: -360mA
- Gate charge: 500pC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±8V
- Drain-source voltage: -20V
- Pulsed drain current: -2A
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: DFN0606-3
- Type of transistor: P-MOSFET
- On-State Resistance: 2.3Ω