Технические параметры
- Technology: Trench
- Drain current: -2.9A
- Gate charge: 20nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: -30V
- Pulsed drain current: -19A
- Mounting: SMD
- Case: TSOP6
- Type of transistor: P-MOSFET
- On-State Resistance: 67mΩ