Транзистор: P-MOSFET; Trench; полевой; -12В; -5,2А; Idm: -33А Технические параметры
- Case: SOT1220
- Channel kind: enhanced
- Drain current: -5.2A
- Drain-source voltage: -12V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 100нКл
- Gate-source voltage: ±12V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 25mΩ
- Polarisation: unipolar
- Pulsed drain current: -33A
- Technology: Trench
- Type of transistor: P-MOSFET