Технические параметры
- Technology: Trench
- Drain current: -4.7A
- Gate charge: 44nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±25V
- Drain-source voltage: -30V
- Pulsed drain current: -30A
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: SOT1220
- Type of transistor: P-MOSFET
- On-State Resistance: 34mΩ