Транзистор: P-MOSFET; Trench; полевой; -20В; -4,5А; Idm: -30А Технические параметры
- Case: SOT1220
- Channel kind: enhanced
- Drain current: -4.5A
- Drain-source voltage: -20V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 43.2нКл
- Gate-source voltage: ±12V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 33mΩ
- Polarisation: unipolar
- Pulsed drain current: -30A
- Technology: Trench
- Type of transistor: P-MOSFET