Транзистор: P-MOSFET; Trench; полевой; -20В; -3,9А; Idm: -25А Технические параметры
- Case: SOT1220
- Channel kind: enhanced
- Drain current: -3.9A
- Drain-source voltage: -20V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 19нКл
- Gate-source voltage: ±-12/±8V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 52mΩ
- Polarisation: unipolar
- Pulsed drain current: -25A
- Technology: Trench
- Type of transistor: P-MOSFET