Технические параметры
- Technology: Trench
- Drain current: -1.5A
- Gate charge: 15.9nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: -70V
- Pulsed drain current: -9.7A
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: SOT223
- Type of transistor: P-MOSFET
- On-State Resistance: 250mΩ