Технические параметры
- Technology: TrenchFET®
- Drain current: 23A
- Gate charge: 26.5nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: 100V
- Pulsed drain current: 70A
- Mounting: SMD
- Case: PowerPAK® SO8
- Type of transistor: N-MOSFET x2
- On-State Resistance: 22.5mΩ
- Power dissipation: 21.6W