Технические параметры
- Application: automotive industry
- Drain current: -28A
- Gate charge: 145nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: -80V
- Pulsed drain current: -190A
- Mounting: SMD
- Case: DPAK
- Type of transistor: P-MOSFET
- On-State Resistance: 28mΩ
- Power dissipation: 45W