Транзистор: NPN; биполярный; 300В; 0,5А; 20,8Вт; SOT32 Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 1V
- Case: SOT32
- Collector current: 0.5A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 500mV
- Collector-Base Voltage (Vcbo): 300V
- Collector-emitter voltage: 300V
- Collector-Emitter Voltage (Vceo): 300V
- Continuous Collector Current (Ic): 500mA
- Emitter-Base Voltage (Vebo): 3V
- Height Units: 3
- Kind of package: tube
- Manufacturer: STM
- Mounting: THT
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: NPN
- Package Type: SOT-32
- Packaging: Tube
- Phases: Single
- Pins: 240
- Polarisation: bipolar
- Power dissipation: 20.8W
- Power Dissipation (Pd): 20.8W
- Type of transistor: NPN
