Технические параметры
- Drain current: 190A
- Module type: transistor
- Channel kind: enhanced
- Polarisation: unipolar
- Electrical mounting: screw
- Gate-source voltage: ±20V
- Drain-source voltage: 100V
- Pulsed drain current: 720A
- Semiconductor structure: single transistor
- Mounting: screw
- Case: SOT227B
- On-State Resistance: 6.5mΩ
- Power dissipation: 568W