Bipolar Transistor 100mA PNP 65V SOT-363 Технические параметры
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 650mV
- Collector-Base Voltage (Vcbo): 80V
- Collector-Emitter Voltage (Vceo): 65V
- Continuous Collector Current (Ic): 100mA
- DC Current Gain (hFE): 475
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 6
- Manufacturer: Diotec Semiconductor
- Mounting Type: SMD
- MSL: Level-1
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Optical Sensor Output Type: PNP
- Package Type: SOT-363
- Packaging: Tape & Reel
- Phases: Single
- Power Dissipation (Pd): 250mW
- Reflow Temperature Max.: 260°C
- Ripple & Noise (%): -999
- Transit Frequency: 100MHz
