Транзистор: NPN; биполярный; 1кВ; 500мА; 20Вт; TO126 Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 1V
- Case: TO126
- Collector current: 500mA
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 1V
- Collector-Emitter Voltage (Vceo): 1kV
- Continuous Collector Current (Ic): 500mA
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Housing: TO126
- Manufacturer: STM
- Mating Cycles: 50
- Mount: THT
- Mounting: THT
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: NPN
- Package Type: SOT-32
- Packaging: Tube
- Phases: Single
- Polarisation: bipolar
- Polarity: биполярный
- Power Dissipation (Pd): 40W
- Ripple & Noise (%): -999
- Transistor type: NPN
- Transit Frequency: 20MHz
- Мощность: 20W
- Напряжение коллектор-эмиттер: 1kV
