Power Transistor, SOT-32, NPN, 30V Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 1.2V
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 1.1V
- Collector-Base Voltage (Vcbo): 60V
- Collector-Emitter Voltage (Vceo): 30V
- Continuous Collector Current (Ic): 3A
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Manufacturer: STM
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: NPN
- Package Type: SOT-32
- Packaging: Tube
- Phases: Single
- Power Dissipation (Pd): 12.5W
- Sheets: 300
- Transit Frequency: 100MHz
