Транзистор: NPN; биполярный; 1кВ; 2А; 40Вт; TO66 Семейство Силовые транзисторы Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 1.1V
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 1V
- Collector-Emitter Voltage (Vceo): 450V
- Continuous Collector Current (Ic): 2A
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Load Capacity (kg/Pair): 30
- Manufacturer: ON SEMICONDUCTOR
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: NPN
- Package Type: TO-220
- Packaging: Tube
- Phases: Single
- Power Dissipation (Pd): 50W
- Reflow Temperature Max.: 260°C
- Ripple & Noise (%): -999
- Transit Frequency: 4MHz
