Power transistor TO-126 NPN 80 V Семейство Силовые транзисторы, ST Технические параметры
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 500mV
- Collector-Base Voltage (Vcbo): 80V
- Collector-Emitter Voltage (Vceo): 80V
- Continuous Collector Current (Ic): 1.5A
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Manufacturer: STM
- Mounting Type: Through Hole
- Number of Sheets: 25
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: NPN
- Package Type: SOT-32
- Packaging: Tube
- Phases: Single
- Power Dissipation (Pd): 1.25W
- Ripple & Noise (%): -999
