Power transistor TO-220 NPN 100 V Семейство Силовые транзисторы NF Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 3V
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 2.5V
- Collector-Base Voltage (Vcbo): 140V
- Collector-Emitter Voltage (Vceo): 120V
- Continuous Collector Current (Ic): 8A
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Manufacturer: Comset Semiconductors
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: NPN
- Package Type: TO-220
- Phases: Single
- Power Dissipation (Pd): 62.5W
- Sheets: 1800