Power transistor TO-3 NPN 60 V Семейство Силовые транзисторы Технические параметры
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 3V
- Collector-Base Voltage (Vcbo): 100V
- Collector-Emitter Voltage (Vceo): 60V
- Continuous Collector Current (Ic): 15A
- Emitter-Base Voltage (Vebo): 7V
- Height Units: 5
- Manufacturer: ON SEMICONDUCTOR
- Mounting Type: Through Hole
- Operating Temperature Max.: 200°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: NPN
- Outputs: 2
- Package Type: TO-204
- Packaging: Tray Foam
- Phases: Single
- Power Dissipation (Pd): 115W
- Reflow Temperature Max.: 260°C
- Ripple & Noise (%): -999
- Transit Frequency: 2.5MHz