Power transistor TO-220 NPN 180 V Семейство Силовые транзисторы для коммутационных приложений Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 2V
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 1.5V
- Collector-Base Voltage (Vcbo): 180V
- Collector-Emitter Voltage (Vceo): 90V
- Continuous Collector Current (Ic): 14A
- Emitter-Base Voltage (Vebo): 7V
- Height Units: 3
- Manufacturer: Comset Semiconductors
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: NPN
- Package Type: TO-220
- Phases: Single
- Power Dissipation (Pd): 85W
- Ripple & Noise (%): -999
