Power transistor TO-220AB NPN 60 V Семейство Силовые транзисторы Технические параметры
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 8V
- Collector-Base Voltage (Vcbo): 70V
- Collector-Emitter Voltage (Vceo): 60V
- Continuous Collector Current (Ic): 10A
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 5
- Manufacturer: ON SEMICONDUCTOR
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Optical Sensor Output Type: NPN
- Package Type: TO-220
- Packaging: Tube
- Phases: Single
- Power Dissipation (Pd): 75W
- Reflow Temperature Max.: 260°C
- Ripple & Noise (%): -999
- Transit Frequency: 2MHz
