Power transistor TO-218 PNP -100 V Семейство Силовые транзисторы TIP... Технические параметры
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 4V
- Collector-Base Voltage (Vcbo): 100V
- Collector-Emitter Voltage (Vceo): 100V
- Continuous Collector Current (Ic): 25A
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Housing Type: TO-218
- HP Rating: 10
- Manufacturer: ON SEMICONDUCTOR
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: PNP
- Phases: Single
- Power Dissipation (Pd): 125W
- Ripple & Noise (%): -999
- Transit Frequency: 3MHz