Power transistor TO-126 PNP -60 V Семейство Силовые транзисторы Технические параметры
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 1V
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 500mV
- Collector-Base Voltage (Vcbo): 60V
- Collector-Emitter Voltage (Vceo): 60V
- Continuous Collector Current (Ic): 1.5A
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Manufacturer: ON SEMICONDUCTOR
- Mounting Type: Through Hole
- Number of Sheets: 25
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Optical Sensor Output Type: PNP
- Package Type: TO-225
- Packaging: Bulk Box
- Phases: Single
- Power Dissipation (Pd): 1.25W
- Reflow Temperature Max.: 260°C