Транзистор: NPN; биполярный; 80В; 1,5А; 12,5Вт; TO126 Семейство Силовые транзисторы Технические параметры
- Case: TO126
- Collector current: 1.5A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 500mV
- Collector-Base Voltage (Vcbo): 100V
- Collector-emitter voltage: 80V
- Collector-Emitter Voltage (Vceo): 80V
- Continuous Collector Current (Ic): 1.5A
- Current gain: 40...250
- Emitter-Base Voltage (Vebo): 5V
- Height Units: 3
- Kind of package: bulk
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- Mounting Type: Through Hole
- Number of Sheets: 25
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Optical Sensor Output Type: NPN
- Package Type: TO-225
- Packaging: Bulk Box
- Phases: Single
- Polarisation: bipolar
- Power dissipation: 12.5W
- Power Dissipation (Pd): 12.5W
- Reflow Temperature Max.: 260°C
- Ripple & Noise (%): -999
- Type of transistor: NPN
