Технические параметры
- Case: TO3
- Collector current: 16A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 4V
- Collector-Base Voltage (Vcbo): 400V
- Collector-emitter voltage: 250V
- Collector-Emitter Voltage (Vceo): 250V
- Continuous Collector Current (Ic): 16A
- Emitter-Base Voltage (Vebo): 5V
- Housing: TO3
- Manufacturer: ON SEMICONDUCTOR
- Mount: THT
- Mounting: THT
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -65°C
- Optical Sensor Output Type: NPN
- Outputs: 2
- Package Type: TO-3
- Packaging: Tray Foam
- Phases: Single
- Polarisation: bipolar
- Polarity: биполярный
- Power Dissipation (Pd): 250W
- Relative Magnetic Permeability: 75
- Ripple & Noise (%): -999
- Transistor type: NPN
- Transit Frequency: 5MHz
- Мощность: 250W
- Напряжение коллектор-эмиттер: 250V
