Транзистор: N-MOSFET; MDmesh™ M5; полевой; 650В; 5,6А; Idm: 36А Технические параметры
- Case: D2PAK
- Channel kind: enhanced
- Drain current: 5.6A
- Drain-source voltage: 650V
- Gate charge: 17нКл
- Gate-source voltage: ±25V
- Kind of package: tape
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 480mΩ
- Polarisation: unipolar
- Power dissipation: 85W
- Pulsed drain current: 36A
- Technology: MDmesh™ M5
- Type of transistor: N-MOSFET