Технические параметры
- Topology: boost chopper
- Technology: POWER MOS 5®
- Drain current: 33A
- Module type: MOSFET transistor
- Polarisation: unipolar
- Electrical mounting: screw
- Gate-source voltage: ±30V
- Mechanical mounting: screw
- Drain-source voltage: 500V
- Pulsed drain current: 176A
- Semiconductor structure: diode/transistor
- Case: ISOTOP
- On-State Resistance: 100mΩ
- Power dissipation: 450W