Технические параметры
- Technology: POWER MOS 7®
- Drain current: 29A
- Module type: MOSFET transistor
- Channel kind: enhanced
- Polarisation: unipolar
- Electrical mounting: screw
- Gate-source voltage: ±30V
- Mechanical mounting: screw
- Drain-source voltage: 800V
- Pulsed drain current: 116A
- Semiconductor structure: single transistor
- Case: ISOTOP
- On-State Resistance: 240mΩ
- Power dissipation: 460W