Модуль; транзистор/транзистор; 500В; 38А; SP3F; Ugs: ±30В; Idm: 204А Технические параметры
- Case: SP3F
- Drain current: 38A
- Drain-source voltage: 500V
- Electrical mounting: Press-in PCB
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 78mΩ
- Power dissipation: 390W
- Pulsed drain current: 204A
- Semiconductor structure: transistor/transistor
- Technology: POWER MOS 7®
- Topology: NTC thermistor