Технические параметры
- Topology: boost chopper
- Technology: SiC
- Drain current: 71A
- Module type: MOSFET transistor
- Electrical mounting: screw
- Mechanical mounting: screw
- Drain-source voltage: 1.2kV
- Pulsed drain current: 180A
- Semiconductor structure: SiC diode/transistor
- Case: SOT227B
- On-State Resistance: 31mΩ
- Power dissipation: 395W