Транзистор: N-MOSFET; полевой; 1кВ; 12А; Idm: 48А; 298Вт; D3PAK Технические параметры
- Case: D3PAK
- Channel kind: enhanced
- Drain current: 12A
- Drain-source voltage: 1kV
- Gate charge: 71нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: SMD
- On-State Resistance: 950mΩ
- Polarisation: unipolar
- Power dissipation: 298W
- Pulsed drain current: 48A
- Technology: POWER MOS 7®
- Type of transistor: N-MOSFET