Транзистор: N-MOSFET; полевой; 600В; 29А; Idm: 116А; 400Вт; D3PAK Технические параметры
- Case: D3PAK
- Channel kind: enhanced
- Drain current: 29A
- Drain-source voltage: 600V
- Gate charge: 80нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: SMD
- On-State Resistance: 210mΩ
- Polarisation: unipolar
- Power dissipation: 400W
- Pulsed drain current: 116A
- Technology: POWER MOS 7®
- Type of transistor: N-MOSFET