Транзистор: N-MOSFET; полевой; 600В; 17А; Idm: 68А; 265Вт; D3PAK Технические параметры
- Case: D3PAK
- Channel kind: enhanced
- Drain current: 17A
- Drain-source voltage: 600V
- Gate charge: 43нКл
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mounting: SMD
- On-State Resistance: 380mΩ
- Polarisation: unipolar
- Power dissipation: 265W
- Pulsed drain current: 68A
- Technology: POWER MOS 7®
- Type of transistor: N-MOSFET